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| HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C (MOSFET chip capability) TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C IXFR 34N80 VDSS = 800 ID25 = 28 RDS(on) = 0.24 trr 250 ns V A Maximum Ratings 800 800 20 30 28 600 150 60 3 5 400 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A mJ J V/ns ISOPLUS 247TM E153432 G D S Isolated backside* G = Gate S = Source D = Drain * Patent pending Features W C C C C V~ g l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<25pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V 100 nA TJ = 25C TJ = 125C 100 A 2 mA 0.24 l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 l l DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l l l Easy assembly Space savings High power density (c) 2000 IXYS All rights reserved 98674A (02/00) IXFR 34N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Notes 2, 3 20 35 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz 920 220 45 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External), Notes 2, 3 45 100 40 270 VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 60 140 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC Dim. 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 ISOPLUS 247 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = IT K/W K/W A A1 A2 b b1 b2 C D E e L L1 Q R Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 34 136 1.5 250 A A V ns C A IF = IT, -di/dt = 100 A/s, VR = 100 V 1.4 10 See IXFN 34N80 data sheet for characteric curves. Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 % 3. IT = 17A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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